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Description: DIODE SIL CARB 650V 6A TO220-2L
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
30 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.6 V @ 6 A |
Package: |
Tube |
Series: |
- |
Capacitance @ Vr, F: |
22pF @ 650V, 1MHz |
Supplier Device Package: |
TO-220-2L |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Toshiba Semiconductor and Storage |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
175°C (Max) |
Package / Case: |
TO-220-2 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
TRS6E65 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
30 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.6 V @ 6 A |
Package: |
Tube |
Series: |
- |
Capacitance @ Vr, F: |
22pF @ 650V, 1MHz |
Supplier Device Package: |
TO-220-2L |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Toshiba Semiconductor and Storage |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
175°C (Max) |
Package / Case: |
TO-220-2 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
TRS6E65 |
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